New RF Power Technology for Mission-Critical Defense Applications

Teledyne will be offering Integra’s new 100V Gallium Nitride on Silicon Carbide power transistors that give designers the ability to increase system power levels and functionality while simplifying system architectures By DA Reporter / 02 Aug 2021

Teledyne e2v HiRel Electronics will be offering High Reliability qualified versions of Integra Technologies, Inc.’s new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors, the first 100V RF GaN/SiC technology for mission-critical defense applications.

Targeting radar, avionics, electronic warfare (EW), industrial, scientific and medical systems, Integra’s 100V RF GaN/SiC High-Electron-Mobility Transistor (HEMT) technology gives designers the ability to increase system power levels and functionality while simplifying system architectures with less power-combining circuitry compared to the more commonplace 50V and 65V GaN technologies. 

Teledyne will qualify Integra’s first 100V product, the IGN1011S3600, which offers 3.6 kW at 1,030 and 1,090 MHz, greater than 19 dB of gain and up to 75% efficiency during the RF pulse. The power transistors are fully RoHS and REACH Compliant. 

Teledyne HiRel will provide further assurance for military and new space applications. 

“Our most demanding customers are requesting higher power density RF power devices,” said Brad Little, VP and General Manager of Teledyne e2v HiRel. “Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.”

Posted by DA Reporter Connect & Contact

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