New High-Power PIN Diode Switches Utilize GaN Semiconductor Technology

Pasternack has launched a new series of high-power RF and microwave PIN diode coaxial packaged switches that are ideal for commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.

Pasternack’s new high-power RF and microwave PIN diode switches utilize gallium nitride (GaN) semiconductor technology. GaN and chip & wire technology in the manufacturing process ensures a power-to-volume ratio that is ideal for broadband high power applications. 

The thermal properties and a high breakdown voltage results in the PIN diode switches tolerating higher input power levels over broadband and narrowband RF and microwave frequencies. Because these are PIN diode designs, they also offer fast switching speed as low as less than 50 nsec.

Other features include cold switching performance up to 100 watts CW RF input power, broad frequency band coverage ranging from DC to 18 GHz with reflective SPDT and SP4T PIN diode designs, TTL compatible driver circuitry for accurate logic control and compact coaxial packages. 

All units are EAR99-compliant and meet a series of environmental conditions for altitude, vibration, humidity and shock.

“These new GaN PIN diode switches benefit from excellent thermal properties, power to volume ratio, and higher breakdown voltage that results in state-of-the-art power handling capability in small compact packages,” said Tim Galla, Product Line Manager at Pasternack.