New GaN Power Amplifiers Released for Military RF Systems

Guerrilla RF, Inc. has released the GRF0020D and GRF0030D, the first in a new class of GaN-on-SiC HEMT power amplifiers for military and aerospace applications.

The new unmatched discrete transistors provide up to 50W of saturated power, ideal for users looking to integrate bare die within custom MMICs. Each device provides high flexibility, supporting 50V or 28V supply rails and covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes.

When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. 

Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This lower-power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. Each device is 100% DC production tested to ensure KGD (known good die) compliance.

Ryan Pratt, CEO and founder of Guerrilla RF, commented, “GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D. Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers.”