High-Power RF GaN Switch Released for Tactical Communications Systems

Teledyne HiRel Semiconductors has released its new Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP, built for military communications systems.

The switch offers high peak power and is intended to replace Positive-Intrinsic-Negative (PIN) diode-based RF switches commonly used in the RF front-ends of modern tactical and military communication radio systems.

Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, the switch provides both a high breakdown voltage and saturation current capabilities.

The RF switch is available in a 16-pin quad-flat no-lead (QFN) 3 mm x 3 mm x 0.8 mm plastic surface-mount package and is qualified for a military temperature range of –55°C to 125°C.

The TDSW84230EP SPDT GaN reflective switch leverages monolithic microwave integrated circuit (MMIC) design techniques and supports high 20-watt CW power handling, operating from 30 MHz to 5 GHz. It features a low 0.2 dB insertion loss and high 45 dB port isolation, offering significant efficiency and board area savings compared to PIN diode architectures.

Commercial versions of the TDSW84230EP devices are available from Teledyne HiRel Semiconductors and authorized distributors.

Mont Taylor, Vice President, and Business Development Manager at Teledyne HiRel, commented, “Today, we’re releasing our latest RF GaN Switch, optimized for Aerospace and Defense applications. To meet the multiple wideband continuous operation demand in today’s military and defense software defined radio architectures, this high-power GaN switch delivers an ideal solution for replacing traditional PIN diode switches, tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities.

“The inherent high breakdown voltage and carrier density of GaN technology enable higher operating power capabilities while delivering high linearity to better support harmonic and spurious signal requirements associated with traditional PIN diode switches.”

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